Insulation groove manufacturing method for direct wafer bond substrate

摘要

The manufacturing method involves forming a lateral insulation groove (4) in a silicon/silicon dioxide/silicon substrate, provided by a crystalline silicon disc (1), a silicon dioxide dielectric insulation layer (2) and an on-type crystalline silicon layer (3). The latter layer is etched and the etched groove is fitted with a highly doped p-type polysilicon (5). The highly doped polysilicon is diffused into the sidewalls (6) of the groove, to provide diffusion regions (7) of opposite conductivity type. The silicon layer has a (110) crystal orientation and the isolation wet etched.