| 摘要 |
There is provided a semiconductor light-receiving device including (a) a semiconductor substrate (1, 15), (b) a multi-layered structure (14) formed on the semiconductor substrate (1, 15), (c) a first electrode (8) formed on the multi-layered structure (14), and (d) a second electrode (10) formed on a lower surface of the semiconductor substrate (1, 15), characterized by that the multi-layered structure (14) has at least one portion (14a, 14b) which is inclined to a direction in which a light introduced into the device is directed. A portion of the multi-layered structure making inclination with the direction provides the same advantageous effect as that a light-receiving area of a light-receiving layer of the multi-layered structure is effectively increased. Thus, the semiconductor light-receiving device could be readily coupled to other devices through optical fibers. In addition, there can be obtained a high coupling efficiency which is greater than 90%. Furthermore, the semiconductor light-receiving device provides a high quantum efficiency which is greater than 90%, and enables to accomplish high-speed response at a speed greater than 20 Gbps. <IMAGE> |
