INTEGRATED CIRCUIT DIELECTRIC AND METHOD

摘要

PROBLEM TO BE SOLVED: To obtain a silica xerogel dielectric, by a method wherein there are provided a first layer of a porous dielectric and a second dielectric layer on the porous dielectric, and the second dielectric layer is satisfied with a specified amount of a volume of a released fine hole on a surface of a porous dielectric layer. SOLUTION: A threshold regulation implant is carried out and a gate dielectric is formed. After a polysilicon gate material coating silicon-converted tungsten and a silicon dioxide layer is vapor-deposited, the layer is patterned to form interconnection 112 with a gate level of a gate 110 in which an oxide 104 is an uppermost layer. Next, a drain implant doped lightly is carried out and a sidewall dielectric 120 is formed on the gate 110 by vapor-deposition and anisotropic liquid etching. The dielectric 120 satisfies at least 50% of a released fine hole on a surface of a gate dielectric layer.