发明名称 |
Hard material-coated wafer, method of making same, polishing apparatus and polishing method of hard material-coated wafer |
摘要 |
A hard material-coated wafer that having a distortable substrate and a hard material film deposited thereon by a CVD method is provided. The substrate is substantially flat while in a free-standing state. However, deposition of the hard material film having a Vickers hardness of more than Hv3000 on the substrate causes the substrate to distort into a generally convex-shape. Specifically, the wafer is distorted to the film side with a distortion height H of -150 mu m to -2 mu m. The resulting wafer can have a total thickness that ranges from 0.1 mm to 2.1 mm; and a diameter that is bigger than 25 mm. Moreover, more than 50% of the film can be polished to a roughness less than Rmax 50 nm and Ra 20 nm. |
申请公布号 |
US5855998(A) |
申请公布日期 |
1999.01.05 |
申请号 |
US19970874536 |
申请日期 |
1997.06.13 |
申请人 |
SUMITOMO ELECTRIC INDUSTRIES, LTD. |
发明人 |
TANABE, KEIICHIRO;IKEGAYA, AKIHOKO;SEKI, YUICHIRO;FUJIMORI, NAOJI |
分类号 |
B24B37/04;C23C16/27;C23C16/56;H01L21/306;(IPC1-7):H01L21/461;B24B1/00 |
主分类号 |
B24B37/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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