Method for fabricating thin films of barium strontium titanate without exposure to oxygen at high temperatures

摘要

A liquid precursor containing barium, strontium, and titanium, is applied to a first electrode, dried in air at a first temperature of 160 DEG C. and then a second temperature of 400 DEG C., and annealed at a temperature of 800 DEG C. in nitrogen to form a thin film of barium strontium titanate. A second electrode is deposited and then the device is patterned to form a capacitor, and a second anneal is performed at a temperature of 800 DEG C. in nitrogen. In this manner, a high electronic quality thin film of barium strontium titanate is fabricated without a high-temperature oxygen anneal.