Semiconductor device suitable for wire bond and flip-chip mounting

摘要

In a semiconductor device with a multilayer device body including a thermal silicon oxide layer (2) bearing conductive pads (3) for connection of contacts, the pads (3) have a nickel layer (4). The nickel layer (4) is 0.5-2 mu m thick and is covered with an oxidation protective conductive metal cover layer (5), especially a 0.005-0.3 mu m thick palladium layer, optionally covered with a 20-100 nm thick gold layer, or a 0.1-0.4 mu m thick gold layer.