发明名称 Integrated memory device, e.g. synchronous DRAM
摘要 The device has data terminals (I/O, A) for reading data from memory cells of the memory and for writing data into memory cells. Also provided are address terminals for applying addresses to address the memory cells. At least some of the data terminals are combined terminals which are identical with at least some of the address terminals. For memory access the combined terminals serve first to apply address bits and then for data transmission. Preferably for each memory access, first an address is read in and then after a latent time a data transmission begins via the data terminals. The reading in of addresses and the data transmission may be controlled by a clock.
申请公布号 DE19741920(A1) 申请公布日期 1998.12.10
申请号 DE19971041920 申请日期 1997.09.23
申请人 SIEMENS AG, 80333 MUENCHEN, DE 发明人 MANYOKI, ZOLTAN, 81739 MUENCHEN, DE
分类号 G11C5/06;(IPC1-7):G11C7/00;G11C29/00 主分类号 G11C5/06
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