| 摘要 |
PROBLEM TO BE SOLVED: To transfer a desired fine pattern on a wafer with high resolution and to prevent deterioration in the shape of the side wall of a transferred resist pattern by forming a correcting pattern for distribution of light having squares of a specified dimension and controlling the min. distance between the center of the pattern and the border of a light transmitting region and a semi-shielding film into a specified range. SOLUTION: This mask consists of a transparent substrate 1 and a semi- shielding film 2 comprising a molybdenum silicide film of 160 nm film thickness on the substrate 1. A light-correcting pattern 3 is arranged in the semi-shielding film 2 near the border between the light-transmitting region 4 having a specified mask pattern and the semi-shielding film 3. The light-correcting pattern 3 consists of light-transmitting holes of small squares. One side of each square is >=2.5 times and <=3 times of the wavelength of the exposure light. The min. distance d between the center of the pattern and the border of the light- transmitting region 4 and the semi-shielding film 2 is controlled to >=3.75 times and <=4 times of the wavelength of the exposure light. |
