| 摘要 |
PROBLEM TO BE SOLVED: To provide a device whose adhesion is satisfactory, whose crystal grain diameters are large, whose electric conductivity is controlled and whose convention efficiently is high by setting the ratio of the number of atoms in a I group element against the III group element of a light absorbing layer and containing the impurity element of donor property except for the III and VI group elements. SOLUTION: An MO layer 12 is deposited on the glass substrate 11 and it is set to be the glass substrate with electrode film 1. A Cu-Ga layer 51 and an In-Sn layer 52 are deposited on the substrate and they are set to be a precursor film 5. The composition of a target is set to be CU0.84 a0.16 and In0.97 Sn0.03 . A temperature is raised to 500 deg.C in Ar or N2 gas, H2 Se gas is diluted, is made to flow for two hours, and is made into selenium. It is held for one hour while gas is made to flow and it is cooled. Then, a ZnSe-ZnO mixed crystal film is deposited on an obtained Cu(In, Ga) Se2 layer 2 containing Sn and an n-type semiconductor layer 3 is obtained. When an ITO thin film is finally deposited and it is set to be a transparent electrode layer 4, the light absorbing layer is superior in adhesion and (crystallinity with the substrate and has suitable electric conductivity Thus, the photovoltaic device of high conversion efficiency can be obtained. |
