发明名称 SURFACE MICROMACHINED ACOUSTIC WAVE PIEZOELECTRIC CRYSTAL
摘要 <p>A high frequency acoustic wave piezoelectric device (10) having parallel etched channels cut into a surface of a piezoelectric substrate so as to form micromachined ridges (20). Top electrodes (30) are located on tops (26) of the ridges (20) and bottom electrodes (32) are located on bottoms of the channels in spacings (22) between ridges (20). The top and bottom electrodes (30, 32) are offset from each other and substantially non-opposing. The electrodes (30, 32) generate a sufficient vertical electrical field (38) when driven to cause the ridges (20) to resonate. A height (28) of the ridges (20) define the operating frequency. The ridges (20) can be made small enough to produce frequencies well over 100 MHz in a fundamental bulk acoustic wave mode.</p>
申请公布号 WO1998054836(A1) 申请公布日期 1998.12.03
申请号 US1998002203 申请日期 1998.02.04
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