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发明名称
Monolitisch integrierte Struktur eines vertikalen Bipolar- und eines vertikalen MOSFET-Transistors
摘要
申请公布号
DE69320033(T2)
申请公布日期
1998.12.03
申请号
DE19936020033T
申请日期
1993.06.10
申请人
CO.RI.M.ME. CONSORZIO PER LA RICERCA SULLA MICROELETTRONICA NEL MEZZOGIORNO, CATANIA, IT
发明人
PALARA, SERGIO, I-95026 ACITREZZA, CATANIA, IT
分类号
H01L27/06;H01L21/8249;H01L27/07;H01L29/78;(IPC1-7):H01L27/07;H01L29/72
主分类号
H01L27/06
代理机构
代理人
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