| 摘要 |
<p>There is provided a backing plate material which undergoes little deformation in high temperature environments such as for high power sputtering and which is lightweight and good in thermal conductivity. A backing plate for sputtering target comprises an Al alloy having a 0.2% proof stress of at least 200 MPa, and an assembly of the backing plate and a sputtering target joined together. Preferably used as the backing plate is an Al alloy which consists of from 0.1 to 7 mass% Cu, from 1 to less than 10 mass% in all of elements selected from the group consisting of Si, Fe, Cu, Mn, Mg, Zn, Cr, V, Zr and Ti, the total of elements other than Al being less than 10 mass%, and the balance Al.</p> |
