Precursor for semiconductor thin films and method for producing semiconductor thin films

摘要

A precursor for manufacturing a semiconductor thin film in which an oxide thin film comprising at least one element as a dopant selected from an element group which consists of Ia-, IIa-, IIb-, Va- and Vb-group element, and Ib- and IIIa-group elements which are main components are deposited on a substrate, or a precursor for manufacturing a semiconductor thin film which is formed by depositing the oxide thin film comprising the Ib- and IIIa-group elements on the substrate wherein at least one of compositions of the Ib- and IIIa-group elements is varied in the direction of a film thickness, and a method for manufacturing a semiconductor thin film comprising the step of heat treating the precursor for manufacturing the semiconductor thin film in the atmosphere containing the VIa-group element. The present invention provides a precursor for manufacturing a semiconductor thin film and a method for manufacturing the semiconductor thin film using the precursor which are suitable for manufacturing the semiconductor thin film having a chalcopyrite structure that has a high energy and uniform efficiency in the case where the semiconductor thin film is used as a photoabsorptive layer of a solar cell.