Method of manufacturing complementary modulation-doped field effect transistors

摘要

Complementary Modulation-Doped Field-Effect Transistors (CMODFETs) using a heterostructure based on Silicon and Germanium alloys are described. The design of the Si/Si1-xGex-based CMODFET is also presented and shown to enable both n-channel or p-channel transport between source and drain implantation regions of the carriers with mobilities enhanced by 1) low ionized dopant scattering phenomena and 2) discretization of the free carrier energy due to quantum confinement.