| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor reducing the shifting of alignment at the time of exposure in a lithography process after forming an epitaxial layer. SOLUTION: On a semiconductor substrate 1 such as a p-type Si substrate, an SiO3 N4 film 3 are successively laminated and formed, and the films 3 and 2 are patterned in a prescribed form to form an alignment mark, consisting of the laminated film of the films 2 and 3 on the surface of the substrate 1. After then an epitaxial layer 4 is selectively formed at between 700 deg.C and 800 deg.C only on a surface, where the substrate 1 is exposed. Temperature at the time of forming the layer 4 is made between 900 deg.C and 1100 deg.C, preferably between 950 deg.C and 1000 deg.C, to selectively form the layer 4 on the surface of the substrate 1 and a polycrystalline Si film can be stacked on the film 3. |
