MANUFACTURE OF THIN-FILM TRANSISTOR

摘要

PROBLEM TO BE SOLVED: To prevent a semiconductor thin film under a metal silicide layer from being etched, when a contact hole for connecting the metal silicide layer formed on the source region of the semiconductor thin film with a pixel electrode is formed in an interlayer insulating film consisting of a silicon nitride film, which covers a thin-film transistor. SOLUTION: A contact hole 32 is formed in an interlayer insulating film 30 by a plasma etching, using the mixed gas of SF6 gas with O2 gas. Whereupon, even if the hole 32 is completely formed in the film 30, an etching of a metal silicide layer 28b and a second region 24d, which are located on the side of a source of a thin film transistor, can be contrived so as not to hardly progress. In this case, the flow rate ratio of the mixed gases is set as the condition of SF6 <=O2 .