CHARGE PUMPING CIRCUIT AND NON-VOLATILE MEMORY DEVICE CIRCUIT HAVING IT

摘要

PROBLEM TO BE SOLVED: To provide a high voltage even in a low power source voltage by constantly maintaining the potential difference between the source and the bulk at the threshold of the parasitic PN diode even when pumping operation process by maintaining the bulk region of a transfer transistor in a floating condition. SOLUTION: In the transfer transistor MPi (i=1-n), the source, drain and n-type well region operate as parasitic diode so that the threshold value maintains a constant potential difference between the source and the bulk. Pulse signals P1, P2, which are high and low in level respectively, are impressed on the gate of the MPi for its driving through a boosting capacitor Ci. A discharge transistor BDTi discharges the boosted potential of each well region to the potential of the semiconductor substrate. And the BDTi whose source region is electrically connected to the well region is controlled by a discharge activating signal EN-BD. By this, the well potential can be promptly discharged to the required potential.