发明名称 Liquid crystal display device of thin film transistor and fabrication method thereof
摘要 In an LCD device of a thin film transistor which includes a thin film transistor having as a switching device gate electrode to which a driving voltage is applied and source/drain electrodes in which a channel is formed and thereby turned on when the driving voltage is applied to the gate electrode and has a data line spaced from the source electrode by a predetermined interval to be insulated therefrom and connected with the drain electrode, by interposing a storage electrode covering the data line and the gate line, located at a lower portion of a pixel electrode and formed of a conductive material capable of cutting off a light between the data line and a pixel electrode and between a gate line and the pixel electrode, the storage electrode cuts off the data line and the pixel electrode, and the gate line and the pixel electrode to minimize a parasitic capacitance generated therebetween, and accordingly, to prevent a cross talk caused by the parasitic capacitance, and thereby an aperture is increased without lowering a transparency rate of light, resulting in achieving a high degree of a picture quality.
申请公布号 US5835169(A) 申请公布日期 1998.11.10
申请号 US19960759211 申请日期 1996.12.05
申请人 LG SEMICON CO., LTD. 发明人 KWON, OH-KYONG;JEONG, KOAN-YEL
分类号 G02F1/136;G02F1/13;G02F1/133;G02F1/1335;G02F1/1343;G02F1/1362;G02F1/1368;(IPC1-7):G02F1/136;G02F1/134 主分类号 G02F1/136
代理机构 代理人
主权项
地址