发明名称 |
Method for etching photolithographically produced quartz crystal blanks for singulation |
摘要 |
A method (202) for etching photolithographically produced quartz crystal blanks for singulation. In a first step (202), a quartz wafer is plated on both sides with metal and subsequently coated on both sides with photoresist. In a second step (204), the photoresist is patterned and developed and the metal layer on one side is etched through to form a narrow channel in the quartz defining a perimeter of a quartz blank. In a third step (206), the quartz channel is preferentially etched partially into the wafer along parallel atomic planes to provide a mechanically weak junction between the quartz wafer and the blanks to be singulated. In a fourth step (208), the photoresist layers are stripped from the quartz wafer. In a final step (210), the quartz blank is cleaved substantially along the bottom of the quartz channel to singulate the crystal blanks from the quartz wafer.
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申请公布号 |
US5833869(A) |
申请公布日期 |
1998.11.10 |
申请号 |
US19970782690 |
申请日期 |
1997.01.16 |
申请人 |
MOTOROLA INC. |
发明人 |
HAAS, KEVIN;WITTE, ROBERT;KIM, SANG |
分类号 |
H01L21/306;H01L21/301;H01L41/09;H01L41/22;H03H3/02;H03H9/19;(IPC1-7):B44C1/22;C03C15/00;C03C25/06 |
主分类号 |
H01L21/306 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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