| 摘要 |
PROBLEM TO BE SOLVED: To enhance a threshold current characteristic by suppressing a generation of a carrier overflow phenomenon, increase carrier injection efficiency, and obtain a stable light-emitting wavelength. SOLUTION: When this element has a p-type clad layer Cd1 and an n-type clad layer Cd2 which nip and active region Act which forms a plurality of quantum-well layers QW1 to QW4, the respective quantum-well layers QW1 to QW4 form potential barriersΔEc1 toΔEc4 between adjacent clad layers Cd1, Cd2 and/or barrier layers. Here, distortion amountsε1 toε4 of the respective quantum-well layers QW1 to QW4 are formed, or distortion amountsε1 toε4 and layer thicknesses T1 to T4 are formed, so that a difference between quantizing levelsμ1 (-μ4) of carriers in the respective quantum-well layers QW1 to QW4 and the potential barriersΔEc1 toΔEc4 is a specific value.
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