发明名称 METHOD FOR ULTRAMICRO MACHINING
摘要 PROBLEM TO BE SOLVED: To carry out ultramicro machining whose typical dimension is the order of nm on an insulator substrate such as glass, crystal and diamond. SOLUTION: First, an ultramicro pattern film whose typical dimension is between 1 and 500 nm is made on an object to be machined 21. Then, a high- speed atomic beam with beam energy of 5 keV or lower is generated by a high-speed atomic beam source 32 by setting the ratio of the length of an atomic beam emission hole in the source 32 to the diameter of the hole at 5 or more and using a fluoric gas. Thereafter, the object 21 coated with the pattern film is put in a vacuum container 33, where the pressure is set at between 1×10<-4> Torr and 5×10<-3> Torr, and is irradiated with the high-speed atomic beam to transfer ultramicro patterns 25 whose typical dimensions are between 1 and 500 nm to the object 21.
申请公布号 JPH10274700(A) 申请公布日期 1998.10.13
申请号 JP19970094579 申请日期 1997.03.28
申请人 EBARA CORP 发明人 TAIMA YASUSHI;HATAKEYAMA MASAKI;ICHIKI KATSUNORI
分类号 G21K5/04;H01L21/302;H01L21/461;H05H3/02;(IPC1-7):G21K5/04 主分类号 G21K5/04
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