发明名称 HALFTONE PHASE SHIFT MASK AND ITS PRODUCTION
摘要 PROBLEM TO BE SOLVED: To avoid excessive exposure by leaked light in the adjacent circuit pattern region exposed to light when a mask has a halftone border region, and to decrease TAT(turn-around-time) and the production cost of the mask. SOLUTION: A halftone layer 11 is deposited on a light-transmitting substrate 13, and the halftone layer 11 is patterned to form a circuit pattern region 17 and a border region (dicing line 21 and frame region 19) adjacent to the region 17. To optimize the transmittance of the halftone layer 11 in the circuit pattern region 17 for the wavelength of the exposure light, the circuit pattern region 17 is subjected to selective stabilizing treatment. In this method, to increase transmittance in the circuit pattern region 17 against the transmittance in the border region 21, a resist layer 15 used for patterning of the halftone layer 11 is used in the border region 21 to maintain its original state.
申请公布号 JPH10268504(A) 申请公布日期 1998.10.09
申请号 JP19970194042 申请日期 1997.07.18
申请人 TOSHIBA CORP 发明人 HASHIMOTO KOJI
分类号 G03F1/00;G03F1/26;G03F1/32;G03F9/00;H01L21/027 主分类号 G03F1/00
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