| 摘要 |
<p>A method and apparatus for significantly reducing and even eliminating the First Wafer Effect is disclosed. In a first aspect, the First Wafer Effect is reduced by heating a deposition chamber (following an idle period) to its steady-state temperature by using a coil to which RF power is applied. In a second aspect, the First Wafer Effect is reduced by similarly heating a deposition chamber (following an idle period) to a temperature greater than its steady-state temperature and then cooling the chamber to its steady-state temperature. Preferably a gas is flowed into the deposition chamber in both the first and second aspects to increase the chamber's heating rate. Further, a DC voltage may be applied to the deposition chamber's target to cause sputtering of target material on non-production objects for target conditioning. <IMAGE></p> |
