| 摘要 |
A semiconductor memory device includes a plurality of memory cells each having a control gate, a source, a drain and a floating gate. A write control unit controls voltages applied to the control gates, the sources and the drains to write data in each memory cell. A write-current determining circuit is connected to the write control unit, for determining a write current flowing in the floating gate of each memory cell and controlling the write control unit in accordance with a determination result, such that data is written in each memory cell with a predetermined write current.
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