| 摘要 |
PROBLEM TO BE SOLVED: To provide a light emitting device having high light emission efficiency and excellent electric characteristics without lowering film quality and capable of suppressing light absorption in a window layer to the utmost in a semiconductor light emitting device in which a light emitting layer formation part is formed with an AlGaInP compound semiconductor and there is used as the window layer one comprising a laminate structure of a semiconductor layer having higher carrier concentration and a GaP layer having greater band gap energy. SOLUTION: The present device includes a substrate 1, a light emitting layer formation part 11 which comprises an AlGaInP compound semiconductor and in which an n-type layer and a p-type layer are laminated to form a light emitting layer on the substrate 1, and a window layer 7 provided out a surface side of the light emitting layer formation part 11. Herein, the window layer 7 comprises a laminate structure of a greater carrier concentration semiconductor layer 7a and large band gap energy semiconductor layer 7c, and a buffer layer 7b is provided between both layers for moderating lattice distortion of both layers. |
