MANUFACTURE OF THIN-FILM TRANSISTOR ARRAY, ELECTRONIC DEVICE AND THIN-FILM TRANSISTOR

摘要

PROBLEM TO BE SOLVED: To form a thin-film transistor array in a self-alignment way on a substrate such as plastic substrate which greatly deforms. SOLUTION: Exposure from back is carried to with gate lines 11 as a mask. A plating layer 16 is formed by a metal exhibiting a higher etching rate than that of a metallic layer 17 forming signal lines 21, a source electrode and a drain electrode above a channel of a semiconductor film 13 with a resist pattern aligned with the gate lines. A thin-film transistor array in which a gate, a source and a drain are formed in a self-alignment way can be obtained by etching the plating layer 16 and the metallic layer 17 at the same time.