MANUFACTURE OF SEMICONDUCTOR THIN FILM

摘要

PROBLEM TO BE SOLVED: To efficiently dope a p-type impurity at a high cocn., without generating cracks by specifying a carrier gas for carrying a raw material gas to a reactor tube by holding down the surface for growing a p-type impurity-doped GaN compd. semiconductor film thereon. SOLUTION: In a reactor tube 1 a substrate holder 3 for holding a substrate 2 with its thin film-forming face down and substrate 2 are disposed and heated by a heater 4. An organometallic compd. raw material gas contg. Mg is gasified and taken out by bubbling a flow-rate-controlled subcarrier H gas fed in a cylinder involving the organometallic compd. and fed into the tube 1 efficiently with a flow-rate-controlled ammonia and carrier gas contg. flow-rate-controlled H 20% or less N mixed with H 20-20%.