发明名称 |
Current switching circuit formed in an integrated semiconductor circuit |
摘要 |
A current switching circuit in an integrated semiconductor circuit includes a load connected to a positive power supply; a first pnp bipolar transistor having a collector electrode connected to the load, and a base electrode connected to a DC bias source and an emitter electrode; and a first n channel MOS transistor having a drain electrode connected to the emitter electrode of the first npn bipolar transistor, a source electrode connected to the ground, and a gate electrode connected to an input terminal, the first MOS transistor turning on and off in response to a voltage applied to the input terminal.
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申请公布号 |
US5812011(A) |
申请公布日期 |
1998.09.22 |
申请号 |
US19970795663 |
申请日期 |
1997.02.06 |
申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
HAYASHI, YUTAKA;UMEYAMA, TAKEHIKO |
分类号 |
H03K17/567;H03K17/687;(IPC1-7):H03K17/68 |
主分类号 |
H03K17/567 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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