发明名称 Current switching circuit formed in an integrated semiconductor circuit
摘要 A current switching circuit in an integrated semiconductor circuit includes a load connected to a positive power supply; a first pnp bipolar transistor having a collector electrode connected to the load, and a base electrode connected to a DC bias source and an emitter electrode; and a first n channel MOS transistor having a drain electrode connected to the emitter electrode of the first npn bipolar transistor, a source electrode connected to the ground, and a gate electrode connected to an input terminal, the first MOS transistor turning on and off in response to a voltage applied to the input terminal.
申请公布号 US5812011(A) 申请公布日期 1998.09.22
申请号 US19970795663 申请日期 1997.02.06
申请人 MITSUBISHI DENKI KABUSHIKI KAISHA 发明人 HAYASHI, YUTAKA;UMEYAMA, TAKEHIKO
分类号 H03K17/567;H03K17/687;(IPC1-7):H03K17/68 主分类号 H03K17/567
代理机构 代理人
主权项
地址