| 摘要 |
A NAND-type flash memory device and driving method thereof is provided. The NAND-type flash memory device includes a first and a second string, a first and a second string select line, a plurality of wordlines, and a first and a second source select line between a bit line contact and a source line. Therefore, predetermined voltages are applied to a first source select line connecting a gate electrode of the first source select transistor, and a second source select line connecting a gate electrode of the second source select transistor to a gate electrode of the fourth source select transistor, thereby preventing unselected cell transistors adjacent to a selected cell transistor from being programmed during program operation of the selected cell transistor.
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