发明名称 |
Silicon-on-insulator body-coupled gated diode for electrostatic discharge (ESD) and analog applications |
摘要 |
A body-coupled gated diode for silicon-on-insulator (SOI) technology is disclosed. The body-coupled gated diode is formed from an SOI field-effect transistor (FET). The body, gate and drain of the SOI FET are tied together, forming the first terminal of the diode. The source of the SOI FET forms the second terminal of the diode. Both NFETs and PFETs may be used to create the diode. An SOI circuit comprising at least one body-coupled gated diode formed from the SOI FET provides electrostatic discharge (ESD) protection and ideal diode characteristics.
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申请公布号 |
US5811857(A) |
申请公布日期 |
1998.09.22 |
申请号 |
US19960731941 |
申请日期 |
1996.10.22 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
ASSADERAGHI, FARIBORZ;HSU, LOUIS LU-CHEN;MANDELMAN, JACK A.;SHAHIDI, GHAVAM G.;VOLDMAN, STEVEN H. |
分类号 |
H01L27/02;(IPC1-7):H01L23/62 |
主分类号 |
H01L27/02 |
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