发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE WITH ITS LAYOUT DESIGNED BY THE CELL BASE METHOD
摘要 On a feed-through cell (40) and a cap cell (41), there are formed in advance basic cells of gate electrodes (13), and a pair of P-type diffused layers (10a, 10b) and N-type diffused layers (11a, 11b). As a result, even if the design is changed after the layout diagrams were made, a logic circuit can be formed from the basic pairs, so that the design change can be flexibly coped with.
申请公布号 WO9840913(A1) 申请公布日期 1998.09.17
申请号 WO1997JP00763 申请日期 1997.03.11
申请人 MITSUBISHI DENKI KABUSHIKI KAISHA;OKAMOTO, YASUSHI 发明人 OKAMOTO, YASUSHI
分类号 H01L27/02;H01L27/118;(IPC1-7):H01L21/82 主分类号 H01L27/02
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