摘要 |
<p>PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor memory cell array and manufacturing method thereof. SOLUTION: The cell has a local source electrode 38 in addition to a conventional floating gate 33, a control gate 34, a cell source electrode 36 and a cell drain electrode 37, thereby improving the device operation and reducing the no. of contact windows 40 of the cell array. This is effective to reduce the size of the cell array. One isolated region 39 is added in two metal lines, respectively, thereby avoiding crosstalk after reducing the size of the memory array and to improve its reliability.</p> |