发明名称 NONVOLATILE SEMICONDUCTOR MEMORY CELL ARRAY AND MANUFACTURING METHOD THEREOF
摘要 <p>PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor memory cell array and manufacturing method thereof. SOLUTION: The cell has a local source electrode 38 in addition to a conventional floating gate 33, a control gate 34, a cell source electrode 36 and a cell drain electrode 37, thereby improving the device operation and reducing the no. of contact windows 40 of the cell array. This is effective to reduce the size of the cell array. One isolated region 39 is added in two metal lines, respectively, thereby avoiding crosstalk after reducing the size of the memory array and to improve its reliability.</p>
申请公布号 JPH10242309(A) 申请公布日期 1998.09.11
申请号 JP19970057173 申请日期 1997.02.26
申请人 GOTAI HANDOTAI KOFUN YUGENKOSHI 发明人 CHIN RYO;RYO SHUKAN
分类号 G11C16/04;G11C11/18;H01L21/8247;H01L27/115;H01L29/788;H01L29/792;(IPC1-7):H01L21/824 主分类号 G11C16/04
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