| 摘要 |
<p>PROBLEM TO BE SOLVED: To perform electron emission in a low electric field using a P type diamond thin film formed by a normal plasma DVD method by injecting electrons to an electron emission layer made of P type diamond via an N type semiconductor having a forbidden band slightly larger or smaller than that of the P type diamond. SOLUTION: An N type semiconductor layer 8 and a P type diamond layer 9 are formed in sequence on a conductive substrate 1, and an insulating film 2 and a gate electrode 4 are formed to expose the P type diamond layer 9. For obtaining a good electron emission characteristic, the impurity density and the film thickness of the P type diamond layer 9 are selected for forming a uniform film and a diamond thin film having a small resistance value. Thus, the barrier of a transmission band formed in a connection surface between the N type semiconductor 8 and the P type diamond layer 9 is reduced and, only by impressing a low electric field, electrons are emitted from the surface of the P type diamond layer 9.</p> |
