| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a semiconductor integrated circuit device wherein a plurality of transistors different in gate oxide film thickness from one another are integrated into one chip without degrading transistor characteristics. SOLUTION: A plurality of external terminals (output terminals) on a semiconductor substrate where a plurality of two or more transistors different in gate oxide film thickness from one another, are connected with an internal circuit through an interface circuit. Transistors other than the transistor having the thinnest gate oxide film are used for the transistors P7, N7 connected directly to the external terminal. A thick-film gate oxide film transistor is used for a node in contact with an external power supply and requiring a high withstand voltage, and a thin-film gate oxide film transistor is used for a transistor not in contact with any external power supply, as mentioned above. Since only voltages that can be controlled by internal voltage drop is applied to the thin- film gate oxide film transistor as a result, the degree of freedom in device/ circuit designing is significantly enhanced.</p> |
