| 摘要 |
PROBLEM TO BE SOLVED: To form amorphous silicon germanium thin film excellent in quality at a relatively low temperature by specifying the dilution ratio of material gas, i.e., dilution gas, to a material gas for silicon in the material gas and manufacturing amorphous silicon germanium while specifying the substrate temperature. SOLUTION: Dilution ratio of material is set at 25 or above. Consequently, a large quantity of hydrogen radical, hydrogen ion or inactive gas ion that is not contributive directly to deposition is produced in a plasma. When these radial or ions hit the epitaxial growth surface, energy is imparted to silane based and germanium based radicals that are contributive to epitaxial growth on the growth surface. Since energy loss due to substrate temperature drop is compensated, amorphous silicon germanium excellent in quality can be deposited at a relatively low temperature without causing degradation of film quality at a substrate temperature as low as 200 deg.C. |
