发明名称 TRANSISTOR WITH BUILT-IN VOLTAGE REGULATOR DIODE
摘要 PROBLEM TO BE SOLVED: To avoid dielectric breakdown of an insulation film between an Al field plate electrode and base region with keeping specified breakdown voltage of a Zener diode by forming this plane electrode distant from a base region on a collector region. SOLUTION: An Al field plate electrode 4 is disposed at an optimum position on a collector region 1 so as to be at a distance d=6-14μm from a base region 2 according to the relation of the distance d and drift of the breakdown voltage of a diode formed between a collector region 1 and base region 2. This holds a given amt. of electrons induced in a lower region of the plate electrode 4 for keeping specified breakdown voltage, thereby avoiding the dielectric breakdown of an insulation film 5.
申请公布号 JPH10242159(A) 申请公布日期 1998.09.11
申请号 JP19970040478 申请日期 1997.02.25
申请人 MITSUBISHI ELECTRIC CORP 发明人 HONDA JIRO
分类号 H01L21/331;H01L27/07;H01L29/73;H01L29/732;H01L29/866;(IPC1-7):H01L21/331 主分类号 H01L21/331
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