发明名称 PLASMA SOURCE FOR HDP-CVD CHAMBER
摘要 <p>PROBLEM TO BE SOLVED: To provide a new antenna coil for a substrate treatment plasma system. SOLUTION: A plasma system has a chamber mainbody 12 formed with a plasma treatment cavity 16 inside and a gas guide port 300 at the center and a top antenna coil 40 properly formed corresponding to the plasma treatment cavity to form a plasma density profile, a dense at the center, above a substrate during operation. The top antenna coil 40 has a center passage 308 to encircle a center gas guide port. To develop the plasma density profile, thin at the center, above the substrate during operation, a side antenna coil 42 is desirably formed and arranged corresponding to a plasma chamber. The top antenna coil 40 and the side antenna coil 42 cooperate each other to form uniform plasma all over the surface of the substrate to be treated.</p>
申请公布号 JPH10241898(A) 申请公布日期 1998.09.11
申请号 JP19980028509 申请日期 1998.02.10
申请人 APPLIED MATERIALS INC 发明人 REDEKER FRED C;ISHIKAWA TETSUYA
分类号 C23C16/50;H01J37/32;H01L21/205;H01L21/31;H05H1/46;(IPC1-7):H05H1/46 主分类号 C23C16/50
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