发明名称 PLASMA RESISTANT MEMBER
摘要 <p>PROBLEM TO BE SOLVED: To obtain a member having superior plasma resistance in an atmosphere of halogen-contg. corrosive gas by forming the surface of a member exposed to plasma in the atmosphere with a Y-Al-garnet sintered compact having specified porosity and specifying the surface roughness. SOLUTION: The surface of a member exposed to plasma in an atmosphere of halogen-contg. corrosive gas such as F- or Cl-contg. gas is formed with a Y-Al-garnet sintered compact having <=3% porosity and the center line average surface roughness Ra is regulated to <=1μm. Plasma resistance to the halogen- contg. corrosive gas can further be improved by reducing the total amt. of oxides of group IIa elements of the Periodic Table and SiO2 contained in the sintered compact to <=1,500ppm. The resultant plasma resistant member is useful to produce constituent parts of a semiconductor producing device having a long service life.</p>
申请公布号 JPH10236871(A) 申请公布日期 1998.09.08
申请号 JP19970042604 申请日期 1997.02.26
申请人 KYOCERA CORP 发明人 MURAKAWA SHUNICHI;NAKAMURA KATSUMI
分类号 H05B3/14;C04B35/44;C23C16/50;C23C16/511;H01L21/203;H01L21/205;H01L21/22;H01L21/302;H01L21/3065;H01L21/68;H01L21/683;(IPC1-7):C04B35/44 主分类号 H05B3/14
代理机构 代理人
主权项
地址