| 摘要 |
PROBLEM TO BE SOLVED: To manufacture the capacitor of a semiconductor device, which can prevent the generation of a leakage current, by a method wherein a dielectric film or an upper electrode is made to expose to a plasma. SOLUTION: An interlayer insulating film 62, a conductive barrier layer 64, a first electrode 66 and a dielectric film 68 are formed in order on a semiconductor substrate 60. Here, a second electrode 70 is formed on the whole surface of the film 68 as an upper electrode of a capacitor without exposing the film 68 to a plasma 72. Then, the electrode 70 is treated using the plasma 72. The plasma 72 is an ECR plasma or an RF plasma. As the source gas for each plasma, gas containing an oxygen atom or a hydrogen atom is used. In this case, the electrode 70 makes a working for protecting the film 68. Accordingly, as damage to the film 68, which can be generated in a process of treating directly the film 68 using a plasma, can be prevented from being generated, the characteristics of the film 68 of the capacitor can be enhanced. |
