发明名称 |
Junction high electron mobility transistor-heterojunction bipolar transistor (jhemt-hbt) monolithic microwave integrated circuit (mmic) and single growth method of fabrication |
摘要 |
A highly uniform, planar and high speed JHEMT-HBT MMIC (20) is fabricated using a single growth process. A multi-layer structure including a composite emitter-channel layer, a base-gate layer and a collector layer is grown on a substrate (26). The composite emitter-channel layer (30) includes a sub-emitter/channel layer that reduces the access resistance to the HBT's emitter (34) and the JHEMT's channel (42), thereby improving the HBT's high frequency performance and increasing the JHEMT's current gain. The multi-layer structure is then patterned and metallized to form an HBT collector contact (52, 54, 56), planar HBT base (46, 50) and JHEMT gate (48, 51) contacts, and planar HBT emitter (34) and JHEMT source (36) and drain (38) contacts. <IMAGE> |
申请公布号 |
EP0829906(A3) |
申请公布日期 |
1998.09.02 |
申请号 |
EP19970115778 |
申请日期 |
1997.09.11 |
申请人 |
HE HOLDINGS, INC. DBA HUGHES ELECTRONICS |
发明人 |
SHEALY, JEFFREY B.;MATLOUBIAN, MEHRAN |
分类号 |
H01L29/73;H01L21/331;H01L21/337;H01L21/8232;H01L21/8252;H01L27/06;H01L27/095;H01L29/205;H01L29/737;H01L29/808 |
主分类号 |
H01L29/73 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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