| 摘要 |
PROBLEM TO BE SOLVED: To make it possible to grow a quality crystal composed mainly of an element other than silicon, especially a dissimilar semiconductor layer of III-V compound semiconductor, on a substrate composed mainly of silicon by making the interior of the formed crystal layer porous. SOLUTION: A crystal composed mainly of an element other than silicon, especially a III-V compound semiconductor, on a substrate composed mainly of silicon. In this case, the interior of the crystal layer constituting the surface of the silicon substrate is made porous to form a semiconductor substrate. The semiconductor substrate is so constituted that a porous layer 2, a thin silicon crystal layer 3, and a crystal 4 composed mainly of an element, such as GaAs and InP, other than silicon, are formed on a thick silicon substrate 1 in the order. Specifically, the crystal 4 is obtained by growing a GaAs layer, 2μm in thickness, on a crystal layer 3 by the vapor phase growth method (two- stage growth method using two different temperatures: 400 deg.C and 650 deg.C), and then growing an InP layer, 10μm in thickness, by the vapor phase growth method.
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