ELECTRON BEAM LITHOGRAPHY AND METHOD OF REDUCING CONTAMINATION OF MASK

摘要

PROBLEM TO BE SOLVED: To provide a method of lessening contamination of a mask in the electron beam lithography. SOLUTION: This method comprises doping at least one plane 110, 120 of an Si membrane mask 100 with B to reduce the electrical resistance of the mask, applying a voltage 135 on both planes of the mask to create an electric field piercing the mask, thereby heating it, computing the shape distortion of each pattern in the mask caused by heating to compensate for the proximity of other shape located near each pattern, and correcting the shape of each pattern. This method is equally applicable to an electron beam system and/or an ion beam system or to a stencil mask and a diffusion mask.