| 摘要 |
1,158,922. Solid state devices. PHILIPS ELECTRONIC & ASSOCIATED INDUSTRIES Ltd. 1 Aug., 1966 [4 Aug., 1965], No. 34353/66. Heading H1K. Radiation-sensitive or radiation-emitting grains 1, e.g. of semi-conducting material such as cadmium sulphide or telluride, are embedded in an insulating filler 2, and electrodes 3, 4, 5 are applied to opposite faces to form a sandwich shaped device. Parts 5 of the upper electrode adjacent the grains 1 are of relatively low electrical conductivity and are highly permeable to a certain radiation, while parts 4 of the upper electrode adjacent the spaces between the grains 1 are of higher conductivity and are less permeable to the same radiation. The arrangement may be used as a radiation detector, radiation absorbed by the grains 1 producing an e.m.f. or impedance change. It may also act as a solar battery, &c., the contact between the electrode 5 and the semi-conducting grains 1 providing rectifying junctions. Alternatively it may be used to convert electrical energy into radiation energy, for example by recombination radiation at a PN junction within each grain 1 or by electroluminescence. In the form shown the filler 2 is an epoxy resin or a hardened photoresist. In the latter case a coherent layer of grains and filler is manufactured by the method disclosed in Specification 1,158,923. The upper surface of the layer of grains and filler is then treated with dilute nitric acid, to convert a thin exposed region of the cadmium sulphide grains 1 into sulphur, and a porous highly conducting layer 4, e.g. of gold, is vapour deposited on. Application of a suitable etch, e.g. sodium sulphite at 80‹ C., causes it to penetrate the layer 4 and selectively dissolve the sulphur layer on the grains 1. The parts of the layer 4 contacting the grains 1 can then easily be removed, e.g. by rubbing, the rest of the layer remaining. A thin transparent layer 5 of copper is then vapour-deposited after a cleaning etch, and finally a non-transparent layer 3, e.g. of indium, is provided on the reverse side of the layer. If the layer is initially built on a support of, for example, glass, it is necessary to separate it prior to deposition of the layer 3, e.g. by selective dissolution of an adhesive layer between the support and the grain layer. Instead of the sulphur layer to allow separation of the layer 4 from the grains I an electroless plating process may be used to deposit a metal layer on the grains, which may subsequently be selectively removed in a manner analogous to the sulphur layer. Alternatively the exposed grain surfaces may simply be roughened, e.g. by etching. In further embodiments photoresist layers are used to perform the same function as the sulphur layer described above, i.e. to permit selective removal of a highly conductive layer from the grains, so that a relatively low conductivity layer, more permeable to radiation, can be deposited thereon. The differentiation between the parts 4 and 5 of the upper electrode may be determined by differing thicknesses of the same conductive, radiation-transparent material or by using materials of differing conductivities and radiation-permeabilities. The assembly may be self-supporting, or may be provided with a support. The electrode 3 may be replaced by a flow of charged particles, e.g. ions or electrons, to produce the desired charge transport, or may be similar in form to the upper electrode 4, 5. The grains 1 may be locally sintered together.
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