| 摘要 |
PROBLEM TO BE SOLVED: To avoid short-circuiting the gate electrode with a source/drain on formation of a silicide by etching back a first and second insulation films to double-structured side walls. SOLUTION: By the RIE method a second silicon nitride insulation film and first silicon oxide insulation film are etched back to form double-structured side walls composed of a buffer layer 13 and silicon nitride layer 14. The buffer layer 13 is anisotropically etched to form trenches 17 at regions of the side walls 15, adjacent to gate electrodes 5, and silicone 8 is formed on the tops of the gate electrodes 5, surface facing at the trenches 17 and top of a high concentration source/drain layer 8. At forming of the silicide on the electrodes 5 the silicide 18 stops in the trenches 17 to avoid creeping the side faces of the side walls 15, thus suppressing the electric short circuit of the gate electrode 5 with the source/drain layer 8.
|
