APPARATUS AND METHOD FOR SPUTTERING A MAGNETRON TARGET

摘要

Material utilization and process stability for rotating cylindrical magnetron target (14) used in a sputtering structure or "race track" (12), allowing the power density on the target surface (14) to be reduced by approximately 50 % for any given point where magnetic confinement of the plasma exists. Offsetting one race track (12) relative to the other (10) along the longitudinal axis of the target (14) reduces the power density at each turn-around area (relative to the longitudinal area). Modestly increasing the target material thickness at the ends of the target allows nearly all of the material between the turn-around areas to be sputtered