| 摘要 |
A method of fabricating a semiconductor memory device having a transfer transistor and a storage capacitor. A first insulating layer 20 is formed on the substrate to cover the transfer transistor. Next, a first conductive layer is formed, which penetrates the first insulating layer and is electrically connected to one of the source/drain regions of the transfer transistor. A pillar-shaped layer 28 is formed on the first conductive layer. At least first and second films (30,32) are successively formed on the first conductive layer and the pillar-shaped layer. Then, the second film, the first film, and the first conductive layer are patterned to form an opening 36, exposing the first insulating layer. A second conductive layer is then formed on sidewalls of the opening. The pillar-shaped layer and the first film are then removed. Finally, a dielectric layer is formed on the first and second conductive layers and the second film and a third conductive layer is formed on the dielectric layer.
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