| 摘要 |
PROBLEM TO BE SOLVED: To obtain an X-ray exposure mask for high-accuracy pattern transfer by a simple method not requiring strict pressure control by forming a sputtering target of Cr and mixing a specific ratio of nitrogen with gaseous argon, then forming a hard mask at the time of forming this mask. SOLUTION: At the time of production of the X-ray exposure mask including a stage for forming the hard mask for etching at least an X-ray absorber, the CrN film formed by a sputtering method in a pressure range of 4 to 25 mTorr by using Cr as a sputtering target and using the gaseous argon mixed with at least 10% of the nitrogen as the sputtering gas is used as the hard mask. Namely, the gaseous argon mixed with at least 10% of the nitrogen is used as the sputtering gas at the time of forming the film of the Cr with an ordinary sputtering device, by which the CrN film is formed. The inclination of the slope changing to a tensile stress from a compressive stress is made gentle by a sputtering gaseous pressure, by which the controllability of the stress is improved. |
