发明名称 SEMICONDUCTOR MEMORY DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor memory device which enables the accurate analysis of the states of word lines, bit lines or memory cells. SOLUTION: A sensing amplifier 3 and an equalizing circuit 4 are connected successively through a cut-off circuit 5 to a pair of complementary bit lines to which each memory cell 6a is connected. Further, a 1st outer terminal 1 through which an arbitrary signal is supplied to a word line selection circuit 8 and a 2nd outer terminal 2 through which an arbitrary signal is supplied to a bit line selection circuit 7 are provided. As the 1st outer terminal 1 and the 2nd outer terminal 2 are used while the cut-off circuit 5 is in an off state, the states of the word lines 10 in a test mode, the bit lines 9 or the memory cells 6a can be accurately analyzed.
申请公布号 JPH10199298(A) 申请公布日期 1998.07.31
申请号 JP19970004221 申请日期 1997.01.14
申请人 TOSHIBA CORP 发明人 KONO YOSHIHIRO
分类号 G11C11/401;G11C11/409;G11C29/00;G11C29/14;H01L21/8242;H01L27/108 主分类号 G11C11/401
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