| 摘要 |
First, a non-doped AlGaAs layer and an n-GaAs layer serving as a conductive layer are formed in order on the surface of a semi-insulating GaAs substrate. Then, a photoresist film having an opening in its predetermined position is formed on the surface of the n-GaAs layer. Then, an electron beam is applied from the upside of the photoresist film by using the photoresist film as a mask. Thereby, a melted layer made of uniform AlGaAs is formed in a region of the n-GaAs layer, non-doped AlGaAs layer and upper portion of the GaAs substrate, which is under the opening 24a. Thereafter, the melted layer is recrystallized. In this case, the melted layer is formed into an amorphous or polycrystalline layer on the GaAs substrate and an device isolation layer is formed.
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