| 摘要 |
An article of manufacture having an epitaxial (111) magnesium oxide (MgO) layer, suitable for use as a buffer layer, on a (111) surface of a tetrahedral semiconductor substrate, and method for its manufacture is described.. The article may further include an epitaxial oxide overlayer on the (111) MgO layer. The overlayer may be a conducting, superconducting, and/or ferroelectric oxide layer. The method of producing the epitaxial (111) magnesium oxide (MgO) layer on the (111) surface of a tetrahedral semiconductor substrate proceeds at low temperature. The method may further include steps for forming the epitaxial oxide layer on the (111) MgO layer. The methods include the steps of preparing the (111) surface of a tetrahedral semiconductor substrate for deposition and the low temperature depositing of an MgO layer on the prepared surface. Further steps may include the depositing of the oxide layer over the MgO layer.
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